Samsung Researchers Achieve Near-Perfect Grain Orientation in Atomic Layer Deposited Ruthenium for Next-Generation Interconnects

Researchers at the Samsung Advanced Institute of Technology (SAIT) have unveiled a breakthrough in interconnect materials at IEDM 2025 with their paper “Grain-Orientation-Engineering of Atomic Layer Deposited Ruthenium Interconnect Technology.” As semiconductor scaling pushes below 10 nm, conventional copper wiring faces mounting resistance and reliability challenges. The SAIT team demonstrated…