Plasma-Based Deposition Refines ALD for Next-Gen DRAM: 30% Higher k, 40× Lower Leakage

Researchers from POSTECH and UNIST in Korea have unveiled a new atomic-layer process using plasma-based deposition (PDP) to significantly improve DRAM capacitors. This innovation addresses a critical challenge in semiconductor manufacturing: enhancing the performance of high-k dielectric materials without introducing defects that cause electrical leakage. The PDP process refines the deposition of…